ssm5h01tu 2014-03-01 1 silicon n channel mos type (u-mos ii)/silicon epitaxial schottky barrier diode ssm5h01tu dc-dc converter ? combined nch mosfet and scho ttky diode into one package. ? low r ds (on) and low v f absolute maximum ratings (ta = 25c) mosfet characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc i d 1.4 drain current pulse i dp (note 2) 2.8 a p d (note 1) 0.5 drain power dissipation t = 10s 0.8 w channel temperature t ch 150 c absolute maximum ratings (ta = 25c) schottky diode characteristics symbol rating unit maximum (peak) reverse voltage v rm 25 v reverse voltage v r 20 v average forward current i o 0.5 a peak one cycle surge forward current (non-repetitive) i fsm 2 (50 hz) a junction temperature t j 125 c absolute maximum ratings (ta = 25c) mosfet, diode common characteristics symbol rating unit storage temperature t stg ?55~125 c operating temperature t opr (note 3) ?40~100 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temper ature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) note 2: the pulse width limited by max channel temperature. note 3: operating temperature limited by max channel temperat ure and max junction temperature. unit: mm ufv jedec ? jeita ? toshiba 2-2r1a weight: 7 mg (typ.) start of commercial production 2002-05
ssm5h01tu 2014-03-01 2 marking equivalent circuit handling precaution when handling individual devices (which are not yet mount ing on a circuit board), be sure that the environment is protected against electrostatic dischar ge. operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. the channel-to-ambient thermal resistance r th (ch-a) and the drain power dissipation p d vary according to the board material, board area, board thickness and pad area. when using this device, please take heat dissipation fully into account. 5 1 3 kef 2 4 5 13 2 4
ssm5h01tu 2014-03-01 3 mosfet electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a v (br) dss i d = 1 ma, v gs = 0 30 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = -20 v 15 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 0.1 ma 1.0 ? 2.4 v forward transfer admittance |y fs | v ds = 5 v, i d = 0.7 a (note 4) 0.9 1.8 ? s i d = 0.7 a, v gs = 10 v (note 4) ? 140 200 drain-source on resistance r ds (on) i d = 0.7 a, v gs = 4 v (note 4) ? 250 450 m input capacitance c iss v ds = 15 v, v gs = 0, f = 1 mhz ? 106 ? pf reverse transfer capacitance c rss v ds = 15 v, v gs = 0, f = 1 mhz ? 15 ? pf output capacitance c oss v ds = 15 v, v gs = 0, f = 1 mhz ? 28 ? pf turn-on time t on ? 18 ? switching time turn-off time t off v dd = 15 v, i d = 0.7 a v gs = 0 to 4 v, r g = 10 ? 10 ? ns note 4: pulse measurement switching time test circuit precaution v th can be expressed as voltage between gate and source when low operat ing current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. (a)test circuit 4 v 0 i d in out v dd 10 s r g r l v dd = 15 v r g = 10 duty 1% v in : t r , t f < 5 ns common source ta = 25c t on t off (b) v in (c) v out 4 v 0 v dd v ds (on) t r t f 10% 10% 90% 90%
ssm5h01tu 2014-03-01 4 schottky diode electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit v f (1) i f = 0.3 a ? 0.38 0.45 v forward voltage v f (2) i f = 0.5 a ? 0.43 ? v reverse current i r v r = 20 v ? ? 50 a total capacitance c t v r = 0 v, f = 1 mhz ? 46 ? pf precaution the schottky barrier diode of this pr oduct are having large-reverse-current -leakage characteristic compare to the other switching diodes. this current leakage and no t proper operating temperat ure or voltage may cause thermal runaway. please take forward and reve rse loss into consideration when you design.
ssm5h01tu 2014-03-01 5 mosfet electrical characteristics graph drain-source voltage v ds (v) i d ? v ds (mosfet) drain current i d (a) drain current i d (a) drain-source on resistance r ds (on) ( ) drain-source on resistance r ds (on) ( ) gate-source voltage v gs (v) r ds (on) ? v gs (mosfet) 1.0 0 0 0.2 5 10 15 20 0.4 0.6 0.8 common source i d = 0.7 a ? 25c ta = 100c 25c common source ta = 25c 0 0 v gs = 2.5 v 10v vgs=3.0v 3.5v 4.0v 3 2.5 1.5 1 0.5 2 0.5 1 1.5 2 common source ta = 25c 0 0 0.5 v gs = 10 v 4 v 1 2 3 0.4 0.3 0.2 0.1 0.5 1.5 2.5 r ds (on) ? i d (mosfet) gate-source voltage v gs (v) i d ? v gs (mosfet) drain current i d (ma) 10000 0.01 0 100 1000 1 10 0.1 5 1 3 ? 25c common source v ds = 5 v ta = 100c 25c 2 4 ambient temperature ta (c) r ds (on) ? ta (mosfet) drain-source on resistance r ds (on) ( ) common source i d = 0.7a 0.5 0 ? 50 v gs = 10 v 4 v 0 50 0.1 0.2 0.3 0.4 100 ambient temperature ta (c) v th ? ta (mosfet) gate threshold voltage v th (v) 3 0 ? 25 0 25 0.5 1 1.5 2 2.5 50 75 100 common source v ds = 5 v i d = 0.1 ma
ssm5h01tu 2014-03-01 6 drain reverse current i dr (a) switching time t (ns) drain current i d (ma) forward transfer admittance ? y fs ? (s) drain-source voltage v ds (v) c ? v ds (mosfet) capacitance c (pf) total gate charge q g (nc) dynamic input characteristic (mosfet) gate-source voltage v gs (v) drain current i d (a) t ? i d (mosfet) drain-source voltage v ds (v) i dr ? v ds (mosfet) 1 0.1 1 10 100 10 100 500 300 30 50 3 5 common source ta = 25c f = 1 mhz v gs = 0 v c iss c oss c rss |y fs | ? i d (mosfet) common source v ds = 5 v ta = 25c 0.001 10000 1 0.01 0.1 1 10 100 1000 3 0.3 0.03 0 0 3.5 3 4 1 2 3 7 10 1 5 2 0.5 1.5 2.5 6 8 9 v dd = 24 v 10 v common source i d = 1.4 a ta = 25c 1 0.01 100 0.1 1000 1 10 common source v dd = 15 v v gs = 0 4 v ta = 25c r g = 10 t off t f t on t r 10 0 0 ? 2 1 1.5 ? 0.4 ? 0.8 ? 1.2 2.5 3 2 0.5 ? 0.2 ? 0.6 ? 1 ? 1.8 ? 1.6 ? 1.4 common source v gs = 0 ta = 25c i dr
ssm5h01tu 2014-03-01 7 . drain power dissipation p d (w) ambient temperature ta (c) p d ? ta (mosfet) 0 0.4 0 100 50 1.2 1 mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) t = 10 s dc 0.6 0.2 0.8 150 drain-source voltage v ds (v) safe operating area (mosfet) drain current i d (a) 0.1 3 1 1 100 0.1 0.01 10 dc operation ta = 25 c i d max (pulse) i d m a x (co n t in uous) 10 ms * 10 s * mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) *: single pulse ta = 25c curves must be derated linearly with increase in temperature. v dss ma x 1 ms * 0.3 0.03
ssm5h01tu 2014-03-01 8 sbd electrical characteristics graph capacitance c t (pf) reverse voltage v r (v) i r ? v r (sbd) reverse current i r (ma) reverse voltage v r (v) c t ? v r (sbd) 3000 1 10 100 1000 0.01 0.1 1 10 100 f = 1 mhz ta = 25c 10 0.001 0 1 0.1 0.01 20 5 pulse measurement ta = 25c 50 10 15 75 100 forward voltage v f (v) i f ? v f (sbd) forward current i f (ma) 1 100 10 0.1 0.4 0.5 0.7 75 50 ta = 25c 100 0 0 0.2 0.3 0.6 1000
ssm5h01tu 2014-03-01 9 transient thermal impedance graph pulse width t w (s) r th ? t w (mosfet) transient thermal impedance r th (c/w ) 0.001 1000 0.01 0.1 1 100 10 100 1000 1 10 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) 1 0.001 1000 100 10 0.1 100 1000 1 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) 0.01 10 pulse width t w (s) r th ? t w (sbd) transient thermal impedance r th (c/w)
ssm5h01tu 2014-03-01 10 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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